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? semiconductor components industries, llc, 2015 may, 2015 ? rev. 6 1 publication order number: ncp160/d ncp160 250 ma, ultra-low noise and high psrr ldo regulator for rf and analog circuits the ncp160 is a linear regulator capable of supplying 250 ma output current. designed to meet the requirements of rf and analog circuits, the ncp160 device provides low noise, high psrr, low quiescent current, and very good load/line transients. the device is designed to work with a 1 f input and a 1 f output ceramic capacitor. it is available in two thickness ultra?small 0.35p, 0.65 mm x 0.65 mm chip scale package (csp) and xdfn?4 0.65p, 1 mm x 1 mm. features ? operating input voltage range: 1.9 v to 5.5 v ? available in fixed voltage option: 1.8 v to 5.14 v ? 2% accuracy over load/temperature ? ultra low quiescent current typ. 18 a ? standby current: typ. 0.1 a ? very low dropout: 80 mv at 250 ma ? ultra high psrr: typ. 98 db at 20 ma, f = 1 khz ? ultra low noise: 10 v rms ? stable with a 1 f small case size ceramic capacitors ? available in ?wlcsp4 0.65 mm x 0.65 mm x 0.4 mm case 567ka ?wlcsp4 0.65 mm x 0.65 mm x 0.33 mm case 567jz ?xdfn4 1 mm x 1 mm x 0.4 mm ? these devices are pb?free, halogen free/bfr free and are rohs compliant typical applications ? battery?powered equipment ? wireless lan devices ? smartphones, tablets ? cameras, dvrs, stb and camcorders in en gnd out off on figure 1. typical application schematics v out c out 1 f ceramic v in ncp160 c in 1 f ceramic wlcsp4 case 567ka marking diagrams www. onsemi.com x or xx = specific device code m = date code see detailed ordering and shipping information on page 16 o f this data sheet. ordering information pin connections xdfn4 case 711aj a1 a2 b1 b2 in out en gnd (top view) (top view) wlcsp4 case 567jz a1 x 1 xx m 1 a1 x
ncp160 www. onsemi.com 2 figure 2. simplified schematic block diagram in thermal shutdown mosfet driver with current limit integrated soft?start bandgap reference enable logic en out gnd en * active discharge version a only pin function description pin no. csp4 pin no. xdfn4 pin name description a1 4 in input voltage supply pin a2 1 out regulated output voltage. the output should be bypassed with small 1 f ceramic capacitor. b1 3 en chip enable: applying v en < 0.4 v disables the regulator, pulling v en > 1.2 v enables the ldo. b2 2 gnd common ground connection ? epad epad expose pad can be tied to ground plane for better power dissipation absolute maximum ratings rating symbol value unit input voltage (note 1) v in ?0.3 v to 6 v output voltage v out ?0.3 to v in + 0.3, max. 6 v v chip enable input v ce ?0.3 to v in + 0.3, max. 6 v v output short circuit duration t sc unlimited s maximum junction temperature t j 150 c storage temperature t stg ?55 to 150 c esd capability, human body model (note 2) esd hbm 2000 v esd capability, machine model (note 2) esd mm 200 v stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device function ality should not be assumed, damage may occur and reliability may be affected. 1. refer to electrical characteristis and application information for safe operating area. 2. this device series incorporates esd protection and is tested by the following methods: esd human body model tested per eia/jesd22?a114 esd machine model tested per eia/jesd22?a115 latchup current maximum rating tested per jedec standard: jesd78. thermal characteristics rating symbol value unit thermal characteristics, csp4 (note 3) thermal resistance, junction?to?air r ja 108 c/w thermal characteristics, xdfn4 (note 3) thermal resistance, junction?to?air 198.1 3. measured according to jedec board specification. detailed description of the board can be found in jesd51?7
ncp160 www. onsemi.com 3 electrical characteristics ?40 c t j 125 c; v in = v out(nom) + 1 v; i out = 1 ma, c in = c out = 1 f, unless otherwise noted. v en = 1.2 v. typical values are at t j = +25 c (note 4). parameter test conditions symbol min typ max unit operating input voltage v in 1.9 5.5 v output voltage accuracy v in = v out(nom) + 1 v 0 ma i out 250 ma v out ?2 +2 % line regulation v out(nom) + 1 v v in 5.5 v line reg 0.02 %/v load regulation i out = 1 ma to 250 ma load reg 0.001 %/ma dropout voltage (note 5) i out = 250 ma v out(nom) = 1.8 v v do 180 250 mv v out(nom) = 2.5 v 110 175 v out(nom) = 2.8 v 95 160 v out(nom) = 2.85 v 95 160 v out(nom) = 3.0 v 90 155 v out(nom) = 3.3 v 80 145 v out(nom) = 3.5 v 75 140 v out(nom) = 4.5 v 65 120 v out(nom) = 5.0 v 75 105 v out(nom) = 5.14 v 60 105 output current limit v out = 90% v out(nom) i cl 250 700 ma short circuit current v out = 0 v i sc 690 quiescent current i out = 0 ma i q 18 23 a shutdown current v en 0.4 v, v in = 4.8 v i dis 0.01 1 a en pin threshold voltage en input voltage ?h? v enh 1.2 v en input voltage ?l? v enl 0.4 en pull down current v en = 4.8 v i en 0.2 0.5 a turn?on time c out = 1 f, from assertion of v en to v out = 95% v out(nom) 120 s power supply rejection ratio i out = 20 ma f = 100 hz f = 1 khz f = 10 khz f = 100 khz psrr 91 98 82 48 db output voltage noise f = 10 hz to 100 khz i out = 1 ma i out = 250 ma v n 14 10 v rms thermal shutdown threshold temperature rising t sdh 160 c temperature falling t sdl 140 c active output discharge resistance v en < 0.4 v, version a only r dis 280 line transient (note 6) v in = (v out(nom) + 1 v) to (v out(nom) + 1.6 v) in 30 s, i out = 1 ma tran line ?1 mv v in = (v out(nom) + 1.6 v) to (v out(nom) + 1 v) in 30 s, i out = 1 ma +1 load transient (note 6) i out = 1 ma to 200 ma in 10 s tran load ?40 mv i out = 200 ma to 1ma in 10 s +40 product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 4. performance g uaranteed over the indicated operating temperature range by design and/or characterization. production tested at t a = 25 c. low duty cycle pulse techniques are used during the testing to maintain the junction temperature as close to ambient as possibl e. 5. dropout voltage is characterized when v out falls 100 mv below v out(nom) . 6. guaranteed by design.
ncp160 www. onsemi.com 4 typical characteristics figure 3. output voltage vs. temperature ? v out = 1.8 v ? xdfn package figure 4. output voltage vs. temperature ? v out = 2.5 v ? xdfn package t j , junction temperature ( c) t j , junction temperature ( c) 120 100 80 60 20 0 ?20 ?40 1.780 1.785 1.790 1.810 1.800 1.805 1.815 1.820 120 100 80 60 40 0 ?20 ?40 2.480 2.485 2.490 2.495 2.500 2.510 2.515 2.520 figure 5. output voltage vs. temperature ? v out = 3.3 v ? xdfn package figure 6. output voltage vs. temperature ? v out = 3.3 v ? csp package t j , junction temperature ( c) t j , junction temperature ( c) 120 100 80 40 20 0 ?20 ?40 3.25 3.26 3.27 3.28 3.29 3.31 3.32 3.33 120 100 80 60 40 0 ?20 ?40 3.27 3.28 3.29 3.30 3.31 3.33 3.34 3.35 figure 7. output voltage vs. temperature ? v out = 5.14 v ? xdfn package figure 8. line regulation vs. temperature ? v out = 1.8 v t j , junction temperature ( c) t j , junction temperature ( c) 120 100 60 40 20 0 ?20 ?40 5.11 5.12 5.13 5.14 5.15 5.17 5.18 5.19 120 100 80 60 20 0 ?20 ?40 0 0.001 0.003 0.004 0.005 0.007 0.009 0.010 v out , output voltage (v) v out , output voltage (v) v out , output voltage (v) v out , output voltage (v) v out , output voltage (v) reg line , line regulation (%/v) 40 140 1.795 i out = 10 ma i out = 250 ma v in = 2.8 v v out = 1.8 v c in = 1 f c out = 1 f 20 140 2.505 i out = 10 ma i out = 250 ma v in = 3.5 v v out = 2.5 v c in = 1 f c out = 1 f i out = 10 ma i out = 250 ma v in = 4.3 v v out = 3.3 v c in = 1 f c out = 1 f 3.30 60 140 20 140 v in = 4.3 v v out = 3.3 v c in = 1 f c out = 1 f i out = 10 ma and 250 ma 3.32 80 140 i out = 10 ma i out = 250 ma v in = 5.5 v v out = 5.14 v c in = 1 f c out = 1 f 5.16 40 140 0.002 0.006 0.008 v in = 2.8 v v out = 1.8 v c in = 1 f c out = 1 f
ncp160 www. onsemi.com 5 typical characteristics figure 9. line regulation vs. temperature ? v out = 3.3 v figure 10. line regulation vs. temperature ? v out = 5.14 v t j , junction temperature ( c) t j , junction temperature ( c) 120 100 80 60 20 0 ?20 ?40 0 0.001 0.003 0.004 0.006 0.007 0.009 0.010 120 100 80 60 20 0 ?20 ?40 0 0.002 0.004 0.006 0.012 0.014 0.016 0.020 figure 11. load regulation vs. temperature ? v out = 1.8 v figure 12. load regulation vs. temperature ? v out = 3.3 v t j , junction temperature ( c) t j , junction temperature ( c) 120 80 60 40 20 0 ?20 ?40 0 0.0002 0.0006 0.0008 0.0010 0.0014 0.0016 0.0020 120 100 80 60 20 0 ?20 ?40 0 0.0002 0.0006 0.0008 0.0010 0.0014 0.0016 0.0020 figure 13. load regulation vs. temperature ? v out = 5.14 v figure 14. ground current vs. load current ? v out = 1.8 v t j , junction temperature ( c) i out , output current (ma) 120 100 80 40 20 0 ?20 ?40 0 0.0002 0.0006 0.0008 0.0012 0.0014 0.0018 0.0020 225 175 150 125 100 75 25 0 0 0.15 0.45 0.60 0.90 1.05 1.35 1.50 reg line , line regulation (%/v) reg load , load regulation (%/ma) reg load , load regulation (%/ma) reg load , load regulation (%/ma) i gnd , ground current (ma) 40 140 0.002 0.005 0.008 v in = 4.3 v v out = 3.3 v c in = 1 f c out = 1 f 40 140 0.008 0.010 0.018 v in = 5.5 v v out = 5.14 v c in = 1 f c out = 1 f 100 140 0.0004 0.0012 0.0018 v in = 2.8 v v out = 1.8 v c in = 1 f c out = 1 f 40 140 0.0004 0.0012 0.0018 v in = 4.3 v v out = 3.3 v c in = 1 f c out = 1 f 60 140 0.0004 0.0010 0.0016 v in = 5.5 v v out = 5.14 v c in = 1 f c out = 1 f 0.30 0.75 1.20 50 200 250 v in = 2.8 v v out = 1.8 v c in = 1 f c out = 1 f t j = 125 c t j = 25 c t j = ?40 c reg line , line regulation (%/v)
ncp160 www. onsemi.com 6 typical characteristics figure 15. ground current vs. load current ? v out = 3.3 v figure 16. ground current vs. load current ? v out = 5.14 v i out , output current (ma) i out , output current (ma) 225 175 150 125 75 50 25 0 0 0.15 0.45 0.60 0.90 1.05 1.35 1.50 225 200 150 125 100 50 25 0 0 0.15 0.45 0.60 0.90 1.05 1.35 1.50 figure 17. dropout voltage vs. load current ? v out = 1.8 v figure 18. dropout voltage vs. load current ? v out = 3.3 v i out , output current (ma) i out , output current (ma) 225 200 150 100 75 50 25 0 0 25 75 100 150 175 225 250 225 200 150 125 100 50 25 0 0 15 45 60 75 120 150 figure 19. dropout voltage vs. load current ? v out = 5.14 v figure 20. dropout v oltage vs. temperature? v out = 1.8 v i out , output current (ma) t j , junction temperature ( c) 225 200 150 125 100 50 25 0 0 15 45 60 90 105 135 150 120 100 80 60 20 0 ?20 ?40 0 25 75 100 150 175 225 250 i gnd , ground current (ma) i gnd , ground current (ma) v drop , dropout voltage (mv) v drop , dropout voltage (mv) v drop , dropout voltage (mv) v drop , dropout voltage (mv) v in = 4.3 v v out = 3.3 v c in = 1 f c out = 1 f t j = 125 c t j = 25 c t j = ?40 c 100 200 250 0.30 0.75 1.20 75 175 250 0.30 0.75 1.20 v in = 5.5 v v out = 5.14 v c in = 1 f c out = 1 f t j = 125 c t j = 25 c t j = ?40 c v out = 1.8 v c in = 1 f c out = 1 f t j = 125 c t j = 25 c t j = ?40 c 50 125 200 125 175 250 v out = 3.3 v c in = 1 f c out = 1 f t j = 125 c t j = 25 c t j = ?40 c 75 175 250 30 105 135 90 75 175 250 30 75 120 v out = 5.14 v c in = 1 f c out = 1 f t j = 125 c t j = 25 c t j = ?40 c 40 140 50 125 200 i out = 0 ma i out = 250 ma v out = 1.8 v c in = 1 f c out = 1 f
ncp160 www. onsemi.com 7 typical characteristics figure 21. comparison dropout for xdfn and csp ? 1.8 v i out , output current (ma) 225 200 150 125 100 50 25 200 v drop , dropout voltage (mv) 75 175 250 xdfn csp4 package 180 160 140 120 100 80 60 40 20 0 0 figure 22. comparison dropout for xdfn and csp ? 3.3 v i out , output current (ma) 225 200 150 125 100 50 25 150 v drop , dropout voltage (mv) 75 175 25 0 0 xdfn csp4 package 135 120 105 90 75 60 45 30 15 0 figure 23. comparison dropout for xdfn and csp ? 5.14 v i out , output current (ma) 225 200 150 125 100 50 25 v drop , dropout voltage (mv) 75 175 250 100 80 60 40 20 0 0 xdfn csp4 package
ncp160 www. onsemi.com 8 typical characteristics figure 24. dropout v oltage vs. temperature? v out = 3.3 v figure 25. dropout v oltage vs. temperature? v out = 5.14 v t j , junction temperature ( c) t j , junction temperature ( c) 120 100 80 60 20 0 ?20 ?40 0 15 45 60 90 105 135 150 120 100 80 60 40 0 ?20 ?40 0 10 30 40 50 70 90 100 figure 26. current limit vs. temperature figure 27. short circuit current vs. temperature t j , junction temperature ( c) t j , junction temperature ( c) 120 100 80 60 40 0 ?20 ?40 650 670 680 690 710 720 740 750 120 100 80 60 40 0 ?20 ?40 600 610 630 640 660 670 690 700 figure 28. enable threshold voltage vs. temperature figure 29. enable current temperature t j , junction temperature ( c) t j , junction temperature ( c) 120 100 80 60 20 0 ?20 ?40 0 0.1 0.3 0.4 0.6 0.7 0.9 1.0 120 100 80 60 40 0 ?20 ?40 0 0.05 0.10 0.20 0.30 0.35 0.40 0.50 v drop , dropout voltage (mv) v drop , dropout voltage (mv) i cl , current limit (ma) i cl , short circuit current (ma) v en , enable voltage threshold (v) i en , enable pin current ( a) 40 140 30 75 120 i out = 0 ma i out = 250 ma v out = 3.3 v c in = 1 f c out = 1 f 20 140 20 60 80 i out = 0 ma i out = 250 ma v out = 5.14 v c in = 1 f c out = 1 f 20 140 660 700 730 v in = 4.3 v v out = 90% v out(nom) c in = 1 f c out = 1 f 20 140 620 650 680 v in = 4.3 v v out = 0 v (short) c in = 1 f c out = 1 f 40 140 0.2 0.5 0.8 off ?> on on ?> off v in = 4.3 v v out = 3.3 v c in = 1 f c out = 1 f v in = 4.3 v v out = 3.3 v c in = 1 f c out = 1 f 20 140 0.15 0.25 0.45
ncp160 www. onsemi.com 9 typical characteristics figure 30. disable current vs. temperature figure 31. discharge resistivity vs. temperature t j , junction temperature ( c) t j , junction temperature ( c) 120 100 80 60 20 0 ?20 ?40 0 10 30 40 60 70 90 100 120 100 80 60 40 0 ?20 ?40 200 220 230 240 260 270 290 300 figure 32. output voltage noise spectral density ? v out = 1.8 v frequency (khz) 1000 100 10 1 0.1 0.01 1 10 100 1000 10,000 figure 33. output voltage noise spectral density ? v out = 3.3 v frequency (khz) 1000 100 10 1 0.1 0.01 1 10 100 1000 10,000 i dis , disable current (na) r dis , discharge resistivity output voltage noise (nv/ hz) 20 50 80 40 140 v in = 4.3 v v out = 3.3 v c in = 1 f c out = 1 f 20 140 210 250 280 v in = 4.3 v v out = 3.3 v c in = 1 f c out = 1 f 1 ma 14.62 14.10 10 ma 11.12 10.48 250 ma 10.37 9.82 10 hz ? 100 khz 100 hz ? 100 khz rms output noise ( v) i out 1 ma 16.9 15.79 10 ma 12.64 11.13 250 ma 11.96 10.64 10 hz ? 100 khz 100 hz ? 100 khz rms output noise ( v) i out output voltage noise (nv/ hz) v in = 2.8 v v out = 1.8 v c in = 1 f c out = 1 f i out = 1 ma i out = 250 ma i out = 10 ma v in = 4.3 v v out = 3.3 v c in = 1 f c out = 1 f i out = 1 ma i out = 250 ma i out = 10 ma
ncp160 www. onsemi.com 10 typical characteristics figure 34. power supply rejection ratio, v out = 1.8 v figure 35. power supply rejection ratio, v out = 3.3 v frequency (khz) frequency (khz) 10k 1k 100 10 1 0.1 0.01 0 20 40 60 80 100 120 10k 1k 100 10 1 0.1 0.01 0 20 40 60 80 100 120 figure 36. power supply rejection ratio, v out = 5.14 v figure 37. stability vs. esr frequency (khz) i out , output current (ma) 10k 1k 100 10 1 0.1 0.01 0 10 30 40 50 70 80 100 300 250 200 150 100 50 0 0.1 1 10 100 figure 38. enable turn?on response ? c out = 1 f, i out = 10 ma figure 39. enable turn?on response ? c out = 1 f, i out = 250 ma 100 s/div 100 s/div rr, ripple rejection (db) rr, ripple rejection (db) rr, ripple rejection (db) esr ( ) 500 mv/div v in = 2.5 v v out = 1.8 v c out = 1 f i out = 10 ma i out = 250 ma i out = 20 ma i out = 100 ma v in = 3.6 v v out = 3.3 v c out = 1 f i out = 10 ma i out = 250 ma i out = 100 ma i out = 20 ma v in = 5.5 v v out = 5.14 v c out = 1 f i out = 10 ma i out = 250 ma i out = 20 ma i out = 100 ma 20 60 90 unstable operation stable operation v in = 2.8 v, v out = 1.8 v c in = 1 f (mlcc) c out = 1 f (mlcc) v en i input v out 1 v/div 500 mv/div 1 v/div 200 ma/div 200 ma/div v in = 2.8 v, v out = 1.8 v c in = 1 f (mlcc) c out = 1 f (mlcc) v en i input v out
ncp160 www. onsemi.com 11 typical characteristics figure 40. line transient response ? v out = 1.8 v figure 41. line transient response ? v out = 3.3 v 20 s/div 20 s/div figure 42. line transient response ? v out = 5.14 v figure 43. turn?on/off ? slow rising v in 20 s/div 4 ms/div figure 44. load transient response ? 1 ma to 250 ma ? v out = 1.8 v figure 45. load transient response ? 250 ma to 1 ma ? v out = 1.8 v 4 s/div 20 s/div 500 mv/div v out = 1.8 v, i out = 10 ma c in = 1 f (mlcc) c out = 1 f (mlcc) v in 3.3 v v out 10 mv/div 2.3 v 500 mv/div 10 mv/div v out = 3.3 v, i out = 10 ma c in = 1 f (mlcc) c out = 1 f (mlcc) 4.8 v 3.8 v 1 v/div 100 ma/div 50 mv/div 200 mv/div v out = 5.14 v, i out = 10 ma c in = 1 f (mlcc) c out = 1 f (mlcc) v in 5.5 v v out 10 mv/div 5.3 v v out = 2.8 v, c in = 1 f (mlcc), i out = 10 ma, c out = 1 f (mlcc) v in v out 100 ma/div 50 mv/div v in = 2.8 v, v out = 1.8 v c in = 1 f (mlcc) c out = 1 f (mlcc) i out v out t rise = 1 s v in = 2.8 v, v out = 1.8 v c in = 1 f (mlcc) c out = 1 f (mlcc) i out v out t fall = 1 s v in v out
ncp160 www. onsemi.com 12 typical characteristics figure 46. load transient response ? 1 ma to 250 ma ? v out = 3.3 v figure 47. load transient response ? 250 ma to 1 ma ? v out = 3.3 v 4 s/div 20 s/div figure 48. load transient response ? 1 ma to 250 ma ? v out = 5.14 v figure 49. load transient response ? 250 ma to 1 ma ? v out = 5.14 v 4 s/div 20 s/div figure 50. short circuit and thermal shutdown figure 51. enable turn?off 10 ms/div 400 s/div 100 ma/div 50 mv/div v in = 4.3 v, v out = 3.3 v c in = 1 f (mlcc) c out = 1 f (mlcc) i out v out t rise = 1 s 100 ma/div 50 mv/div v in = 4.3 v, v out = 3.3 v c in = 1 f (mlcc) c out = 1 f (mlcc) i out v out t fall = 1 s 100 ma/div 50 mv/div v in = 5.5 v, v out = 5.14 v c in = 1 f (mlcc) c out = 1 f (mlcc) i out v out t fall = 1 s 100 ma/div 50 mv/div v in = 5.5 v, v out = 5.14 v c in = 1 f (mlcc) c out = 1 f (mlcc) i out v out t rise = 1 s 500 mv/div 1 v/div v in = 3.8 v v out = 2.8 v c in = 1 f (mlcc) v en v out c out = 1 f c out = 4.7 f 500 ma/div 1 v/div i out v out short circuit event overheating thermal shutdown tsd cycling v in = 5.5 v, v out = 3.3 v c in = 1 f (mlcc) c out = 1 f (mlcc)
ncp160 www. onsemi.com 13 applications information general the ncp160 is an ultra?low noise 250 ma low dropout regulator designed to meet the requirements of rf applications and high performance analog circuits. the ncp160 device provides very high psrr and excellent dynamic response. in connection with low quiescent current this device is well suitable for battery powered application such as cell phones, tablets and other. the ncp160 is fully protected in case of current overload, output short circuit and overheating. input capacitor selection (c in ) input capacitor connected as close as possible is necessary for ensure device stability. the x7r or x5r capacitor should be used for reliable performance over temperature range. the value of the input capacitor should be 1 f or greater to ensure the best dynamic performance. this capacitor will provide a low impedance path for unwanted ac signals or noise modulated onto constant input voltage. there is no requirement for the esr of the input capacitor but it is recommended to use ceramic capacitors for their low esr and esl. a good input capacitor will limit the influence of input trace inductance and source resistance during sudden load current changes. output decoupling (c out ) the ncp160 requires an output capacitor connected as close as possible to the output pin of the regulator. the recommended capacitor value is 1 f and x7r or x5r dielectric due to its low capacitance variations over the specified temperature range. the ncp160 is designed to remain stable with minimum ef fective capacitance of 0.7 f to account for changes with temperature, dc bias and package size. especially for small package size capacitors such as 0201 the ef fective capacitance drops rapidly with the applied dc bias. please refer figure 52. figure 52. capacity vs dc bias voltage there is no requirement for the minimum value of equivalent series resistance (esr) for the c out but the maximum value of esr should be less than 2 . larger output capacitors and lower esr could improve the load transient response or high frequency psrr. it is not recommended to use tantalum capacitors on the output due to their large esr. the equivalent series resistance of tantalum capacitors is also strongly dependent on the temperature, increasing at low temperature. enable operation the ncp160 uses the en pin to enable/disable its device and to deactivate/activate the active discharge function. if the en pin voltage is <0.4 v the device is guaranteed to be disabled. the pass transistor is turned?off so that there is virtually no current flow between the in and out. the active discharge transistor is active so that the output voltage v out is pulled to gnd through a 280 resistor. in the disable state the device consumes as low as typ. 10 na from the v in . if the en pin voltage >1.2 v the device is guaranteed to be enabled. the ncp160 regulates the output voltage and the active discharge transistor is turned?off. the en pin has internal pull?down current source with typ. value of 200 na which assures that the device is turned?off when the en pin is not connected. in the case where the en function isn?t required the en should be tied directly to in. output current limit output current is internally limited within the ic to a typical 700 ma. the ncp60 will source this amount of current measured with a voltage drops on the 90% of the nominal v out . if the output voltage is directly shorted to ground (v out = 0 v), the short circuit protection will limit the output current to 690 ma (typ). the current limit and short circuit protection will work properly over whole temperature range and also input voltage range. there is no limitation for the short circuit duration. thermal shutdown when the die temperature exceeds the thermal shutdown threshold (t sd 160 c typical), thermal shutdown event is detected and the device is disabled. the ic will remain in this state until the die temperature decreases below the thermal shutdown reset threshold (t sdu ? 140 c typical). once the ic temperature falls below the 140 c the ldo is enabled again. the thermal shutdown feature provides the protection from a catastrophic device failure due to accidental overheating. this protection is not intended to be used as a substitute for proper heat sinking. power dissipation as power dissipated in the ncp160 increases, it might become necessary to provide some thermal relief. the maximum power dissipation supported by the device is dependent upon board design and layout. mounting pad configuration on the pcb, the board material, and the ambient temperature affect the rate of junction temperature rise for the part.
ncp160 www. onsemi.com 14 the maximum power dissipation the ncp160 can handle is given by: p d(max) 125 o c t a ja (eq. 1) the power dissipated by the ncp160 for given application conditions can be calculated from the following equations: p d v in i gnd i out v in v out
(eq. 2) figure 53. ja and p d (max) vs. copper area (csp4) 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 80 90 100 110 120 130 140 150 160 0 100 200 300 400 500 600 700 pcb copper area (mm 2 ) ja , junction to ambient thermal resistance ( c/w) p d(max) , maximum power dissipation (w) ja , 2 oz cu ja , 1 oz cu p d(max) , t a = 25 c, 1 oz cu p d(max) , t a = 25 c, 2 oz cu figure 54. ja and p d (max) vs. copper area (xdfn44) 0.3 0.4 0.5 0.6 0.8 0.7 0.9 1.0 150 160 170 180 190 200 210 220 0 100 200 300 400 500 600 700 pcb copper area (mm 2 ) ja , junction to ambient thermal resistance ( c/w) p d(max) , maximum power dissipation (w) ja , 2 oz cu ja , 1 oz cu p d(max) , t a = 25 c, 1 oz cu p d(max) , t a = 25 c, 2 oz cu
ncp160 www. onsemi.com 15 reverse current the pmos pass transistor has an inherent body diode which will be forward biased in the case that v out > v in . due to this fact in cases, where the extended reverse current condition can be anticipated the device may require additional external protection. power supply rejection ratio the ncp160 features very high power supply rejection ratio. if desired the psrr at higher frequencies in the range 100 khz ? 10 mhz can be tuned by the selection of c out capacitor and proper pcb layout. turn?on time the turn?on time is defined as the time period from en assertion to the point in which v out will reach 98% of its nominal value. this time is dependent on various application conditions such as v out(nom) , c out , t a . pcb layout recommendations to obtain good transient performance and good regulation characteristics place c in and c out capacitors close to the device pins and make the pcb traces wide. in order to minimize the solution size, use 0402 or 0201 capacitors with appropriate capacity. larger copper area connected to the pins will also improve the device thermal resistance. the actual power dissipation can be calculated from the equation above (equation 2). expose pad can be tied to the gnd pin for improvement power dissipation and lower device temperature.
ncp160 www. onsemi.com 16 ordering information device nominal output voltage description marking rotation package shipping ? ncp160afcs180t2g 1.8 v 250 ma, active discharge a 0 wlcsp4 case 567ka (pb-free) 5000 / tape & reel ncp160afcs250t2g 2.5 v d 0 ncp160afcs280t2g 2.8 v e 0 ncp160afcs285t2g 2.85 v f 0 ncp160afcs300t2g 3.0 v j 0 NCP160AFCS320T2G 3.2 v v 0 ncp160afcs330t2g 3.3 v k 0 ncp160afcs350t2g 3.5 v l 0 ncp160afcs450t2g 4.5 v p 0 ncp160afcs500t2g 5.0 v r 0 ncp160afcs514t2g 5.14 v q 0 ncp160bfcs180t2g 1.8 v 250 ma, non-active discharge a 90 wlcsp4 case 567ka (pb-free) 5000 / tape & reel ncp160bfcs250t2g 2.5 v d 90 ncp160bfcs280t2g 2.8 v e 90 ncp160bfcs285t2g 2.85 v f 90 ncp160bfcs300t2g 3.0 v j 90 ncp160bfcs330t2g 3.3 v k 90 ncp160bfcs350t2g 3.5 v l 90 ncp160bfcs450t2g 4.5 v p 90 ncp160bfcs500t2g 5.0 v r 90 ncp160bfcs514t2g 5.14 v q 90 ncp160afct180t2g 1.8 v 250 ma, active discharge a 0 wlcsp4 case 567jz (pb-free) 5000 / tape & reel ncp160afct250t2g 2.5 v d 0 ncp160afct280t2g 2.8 v e 0 ncp160afct285t2g 2.85 v f 0 ncp160afct300t2g 3.0 v j 0 ncp160afct330t2g 3.3 v k 0 ncp160afct350t2g 3.5 v l 0 ncp160afct450t2g 4.5 v p 0 ncp160afct500t2g 5.0 v r 0 ncp160afct514t2g 5.14 v q 0 ncp160bfct180t2g 1.8 v 250 ma, non-active discharge a 90 wlcsp4 case 567jz (pb-free) 5000 / tape & reel ncp160bfct210t2g 2.1 v t 90 ncp160bfct250t2g 2.5 v d 90 ncp160bfct280t2g 2.8 v e 90 ncp160bfct285t2g 2.85 v f 90 ncp160bfct300t2g 3.0 v j 90 ncp160bfct330t2g 3.3 v k 90 ncp160bfct350t2g 3.5 v l 90 ncp160bfct450t2g 4.5 v p 90 ncp160bfct500t2g 5.0 v r 90 ncp160bfct514t2g 5.14 v q 90
ncp160 www. onsemi.com 17 ordering information device nominal output voltage description marking package shipping ncp160amx180tbg 1.8 v 250 ma, active discharge df xdfn-4 (pb-free) 3000 / tape & reel (available soon) ncp160amx250tbg 2.5 v dg ncp160amx280tbg 2.8 v dh ncp160amx285tbg 2.85 v dj ncp160amx300tbg 3.0 v dk ncp160amx320tbg 3.2 v dy ncp160amx330tbg 3.3 v da ncp160amx350tbg 3.5 v dl ncp160amx450tbg 4.5 v dm ncp160amx500tbg 5.0 v dw ncp160amx514tbg 5.14 v dc ncp160bmx180tbg 1.8 v 250 ma, non-active discharge ef xdfn-4 (pb-free) 3000 / tape & reel (available soon) ncp160bmx250tbg 2.5 v eg ncp160bmx280tbg 2.8 v eh ncp160bmx285tbg 2.85 v ej ncp160bmx300tbg 3.0 v ek ncp160bmx330tbg 3.3 v ea ncp160bmx350tbg 3.5 v el ncp160bmx450tbg 4.5 v em ncp160bmx500tbg 5.0 v ew ncp160bmx514tbg 5.14 v ec ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
ncp160 www. onsemi.com 18 package dimensions case 567ka issue o seating plane 0.05 c notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. coplanarity applies to spherical crowns of solder balls. 2x dim a min max 0.35 millimeters a1 d 0.64 bsc e b 0.185 0.215 e 0.35 bsc 0.45 d e a b pin a1 reference e a 0.05 b c 0.03 c 0.05 c 4x b 12 b a 0.05 c a a1 a2 c 0.14 0.18 0.64 bsc 0.05 c 2x top view side view bottom view note 3 e a2 0.25 ref pitch 0.20 4x dimensions: millimeters *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 0.35 0.35 recommended a1 package outline pitch
ncp160 www. onsemi.com 19 package dimensions xdfn4 1.0x1.0, 0.65p case 711aj issue o notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. dimension b applies to plated terminal and is measured between 0.15 and 0.20 mm from the terminal tips. 4. coplanarity applies to the exposed pad as well as the terminals. a b e d d2 bottom view b e 4x note 3 2x 0.05 c pin one reference top view 2x 0.05 c a a1 (a3) 0.05 c 0.05 c c seating plane side view l 4x 1 2 dim min max millimeters a 0.33 0.43 a1 0.00 0.05 a3 0.10 ref b 0.15 0.25 d 1.00 bsc d2 0.43 0.53 e 1.00 bsc e 0.65 bsc l 0.20 0.30 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. mounting footprint* 1.20 0.26 0.24 4x dimensions: millimeters 0.39 recommended package outline note 4 e/2 d2 45 a m 0.05 b c 4 3 0.65 pitch detail a 4x b2 0.02 0.12 l2 0.07 0.17 4x 0.52 2x 0.11 4x l2 4x detail a b2 4x
ncp160 www. onsemi.com 20 package dimensions case 567jz issue o seating plane 0.05 c notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. coplanarity applies to spherical crowns of solder balls. 2x dim a min max ??? millimeters a1 d 0.64 bsc e b 0.195 0.225 e 0.35 bsc 0.33 d e a b pin a1 reference e a 0.03 b c 0.05 c 4x b 12 b a 0.05 c a a1 a2 c 0.04 0.08 0.64 bsc 0.05 c 2x top view side view bottom view note 3 e a2 0.23 ref pitch 0.20 4x dimensions: millimeters *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 0.35 0.35 recommended a1 package outline pitch on semiconductor and the are registered trademarks of semiconductor components industries, llc (scillc) or its subsidia ries in the united states and/or other countries. scillc owns the rights to a number of pa tents, trademarks, copyrights, trade secret s, and other intellectual property. a listin g of scillc?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any product s herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any part icular purpose, nor does sci llc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typi cal? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating param eters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgic al implant into the body, or other applications intended to s upport or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer s hall indemnify and hold scillc and its officers , employees, subsidiaries, affiliates, and dist ributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufac ture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 ncp160/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative

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